Por favor utiliza este link para citar o compartir este documento: http://repositoriodigital.academica.mx/jspui/handle/987654321/86095
Título: Hall effect: the role of nonequilibrium charge carriers
Palabras clave: Galvanomagnetic phenomena
bipolar semiconductors
recombination
Hall effect
Fecha de publicación: 31-Jul-2012
Editorial: Revista mexicana de física
Descripción: A new model of the Hall effect in the case of a bipolar semiconductor is present. Taking into account the nonequilibrium carriers, thermal generation and recombination processes assisted by traps (Shockley-Read model), the expressions for the electrochemical potential of elec-trons and holes, Hall field and Hall constant R H are obtained. The dependence of these expressions of the distribution of the carriers along the direction of the Hall field in the case of intrinsic and extrinsic semiconductors is studied.
Other Identifiers: http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2011000400012
Aparece en las Colecciones:Revista Mexicana de Física

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