Por favor utiliza este link para citar o compartir este documento: http://repositoriodigital.academica.mx/jspui/handle/987654321/86059
Título: Impact of the base doping concentration on the transport mechanisms in n-type a-SiGe:H/p-type c-Silicon Heterojunctions
Palabras clave: Amorphous semiconductors
heterojunction diodes
transport mechanisms
base doping concentration
Fecha de publicación: 31-Jul-2012
Editorial: Revista mexicana de física
Descripción: The charge transport mechanisms occurring in n-type a-SiGe:H on p-type c-Si heteroj unctions were determined by analyzing the temperature dependence of the current-voltage characteristics in structures with four different peak base doping concentrations (N B = 1 x 10(15), 7 x 10(16), 7 x l0(17) and 5 x lO18 cm-3). From the experimental results, we observed that at low forward bias (V< 0.45V) the current is determined by electron diffusion from the n-type amorphous film to the p-type c-Si for the heterojunction with N B = 1 x 10(15)cm-3, whereas the Multi-Tunneling Capture Emission (MTCE) was identified as the main transport mechanism for the other base doping concentrations. On the other hand, at high forward bias (V&gt; 0.45V), the space charge limited current effect became the dominant transport mechanism for all the measured devices. Under reverse bias the transport mechanisms depends on the peak base doping, going from carrier generation inside the space charge region for the lowest doping, to hopping and thermionic field emission as the base doping concentration is increased.
Other Identifiers: http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2011000200006
Aparece en las Colecciones:Revista Mexicana de Física

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