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http://repositoriodigital.academica.mx/jspui/handle/987654321/85637| Título: | A 540µT-1 silicon-based MAGFET |
| Palabras clave: | Semiconductor devices field effect devices microelectronics |
| Fecha de publicación: | 31-Jul-2012 |
| Editorial: | Revista mexicana de física |
| Descripción: | This paper describes an MOS transistor-based transducer used for measuring magnetic fields. The setup, the electric/magnetic characterization, and an equivalent circuit for transistor level simulations are presented. The sensor (also called MAGFET), designed in a 1.5 µm CMOS process, presents a relative magnetic sensitivity Sr=540/µT-1 at room temperature. |
| Other Identifiers: | http://www.scielo.org.mx/scielo.php?script=sci_arttext&pid=S0035-001X2007000300012 |
| Aparece en las Colecciones: | Revista Mexicana de Física |
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